Engineering interface-type resistance switching based on forming current compliance in ITO/Ga2O3:ITO/TiN resistance random access memory: Conduction mechanisms, temperature effects, and electrode influence

In this paper, an ITO/Ga2O3:ITO/TiN structuredresistance random access memory is introduced. Either interface or filamentconduction mechanism can be induced depending on the forming compliancecurrent, which has not been investigated before. Material analyses and electrical I –V measurements on this ITO/Ga2O3:ITO/TiN have also been carried out. The interfaceconduction mechanism was confirmed by a size-effect experiment, whereresistance varied inversely to via size. In addition, thecurrent fitting results show thatSchottky emission dominates the on- and off-statecurrents. All physical mechanisms of deviceresistive switching behaviors are explained by our models and also confirmed by I –V characteristics.

Source: Applied Physics Letters - November 4, 2016 Category: Physics Authors: Chih-Hung Pan, Ting-Chang Chang, Tsung-Ming Tsai, Kuan-Chang Chang, Po-Hsun Chen, Shi-Wang Chang-Chien, Min-Chen Chen, Hui-Chun Huang, Huaqiang Wu, Ning Deng, He Qian and Simon M. Sze Source Type: research