Perpendicular magnetic anisotropy of Co\Pt bilayers on ALD HfO2

PerpendicularMagnetic Anisotropy (PMA) is a key requirement for state of the art Magnetic Random Access Memories (MRAM). Currently, PMA has been widely reported in standard Magnetic Tunnel Junctionmaterial stacks using MgO as adielectric. In this contribution, we present the first report of PMA at the interface with a high-κdielectric grown by Atomic Layer Deposition, HfO2. The PMA appears afterannealing a HfO2\Co\Pt\Ru stack in N2 with the Keff of 0.25 mJ/m2 as determined by Vibrating Sample Magnetometry.X-Ray Diffraction andTransmission Electron Microscopy show that the appearance of PMA coincides withinterdiffusion and theepitaxial ordering of the Co\Pt bilayer. High-κdielectrics are especially interesting for Voltage Control ofMagnetic Anisotropy applications and are of potential interest for low-power MRAM and spintronics technologies.

Source: Journal of Applied Physics - October 27, 2016 Category: Physics Authors: Bart F. Vermeulen, Jackson Wu, Johan Swerts, Sebastien Couet, Dimitri Linten, Iuliana P Radu, Kristiaan Temst, Geert Rampelberg, Christophe Detavernier, Guido Groeseneken and Koen Martens Source Type: research