Note: Characterization and test of a high input impedance RF amplifier for series nanowire detector

We designed a high input impedanceRFamplifier based on Tower Jazz ’s 0.18 μm SiGe BiCMOS process for seriesnanowiredetector. The characterization of its gain and input impedance with a vector network analyzer is described in detail for its specificity. The actual 15 dB gain should be themeasured value subtracts 6 dB, which is easy to be ignored. Its input impedance can be equivalent to 6.7 k Ω ∥ 3.4 pF though fitting themeasurement, whose accuracy is verified. The process ofmeasurement provides a good reference to characterize the similar specialamplifier with unmatched impedance.

Source: Review of Scientific Instruments - September 30, 2016 Category: Physics Authors: Chao Wan, Yufeng Pei, Zhou Jiang, Lin Kang and Peiheng Wu Source Type: research