Low power RF amplifier circuit for ion trap applications

A low power RFamplifier circuit forion trap applications is presented and described. Theamplifier is based on a class-D half-bridgeamplifier with a voltage mirror driver. The RFamplifier is composed of an RF class-Damplifier, an envelope modulator to ramp up the RF voltage during the ionanalysis stage, a detector or amplitude demodulation circuit for sensing the output signal amplitude, and a feedbackamplifier that linearizes the steady state output of theamplifier. The RF frequency is set by a crystaloscillator and the series resonant circuit is tuned to theoscillator frequency. The resonant circuit components have been chosen, in this case, to operate at 1  MHz. In testings, the class-D stage operated at a maximum of 78 mW at 1.1356 MHz producing 225 V peak.

Source: Review of Scientific Instruments - September 20, 2016 Category: Physics Authors: J. R. Noriega, L. A. Garc ía-Delgado, R. Gómez-Fuentes and A. García-Juárez Source Type: research