Effects of Gate Oxide Materials on Electrical Performance of Amorphous Ingazno thin Film Transistors: An Analytical Survey

Publication date: 2015 Source:Procedia Materials Science, Volume 11 Author(s): M. Ghaneii, M.H. Shahrokh Abadi Three different oxides, including SiO2, HfLaO, and TiO2, were considered as the gate oxide (GOX) of an Amorphous Indium Gallium Zinc Oxide Thin-Film Transistor (a-IGZO TFT) and the electrical performance of the device was analytically studied using Atlas Silvaco®. The device was simulated in 2D environment and the ratio of the on- to off-state current, the subthreshold swing (SS), and the threshold voltage (V th ) of the device were investigated using individual oxides. The results are shown that significant improvements in the electrical properties in terms of a reduction in the off-state current with a large I on /I off ratio of about 1015, a lowering in the subthreshold swing as low as 0.13V/decade, and a decreasing in the threshold voltage to 0.23V can be achieved in presence of the TiO2 as the GOX layer, compared with the other oxides.
Source: Procedia Materials Science - Category: Materials Science Source Type: research